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2SK2408
Silicon N Channel MOS FET
REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006
Application
High speed power switching
Features
* * * * * Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.3.00 Apr 27, 2006 page 1 of 6
2SK2408
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 500 30 7 28 7 60 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 500 30 -- -- 2.0 -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.7 6.0 1100 310 50 15 55 100 48 0.9 120 Max -- -- 10 250 3.0 0.9 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5
IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s
Rev.3.00 Apr 27, 2006 page 2 of 6
2SK2408
Main Characteristics
Power vs. Temperature Derating
80 50 20
10
PW
D C
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
0
Drain Current ID (A)
60
10 5 2 1 0.5 0.2 0.1 0.05
1
10
tio
O
m
s s
pe
s
ra
=
n (T
m s (1
40
sh
Operation in this area is limited by RDS(on)
c
=
ot )
) C
25
20
Ta = 25C 1 3 10 30 100 300 1000
0
50
100
150
200
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 10 V 7V 6V 20
Typical Transfer Characteristics
VDS = 20 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
16
Pulse Test
16
-25C
Ta = 25C
12 5V
12
75C
8
8
4 VGS = 4 V 0 10 20 30 40 50
4
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test 8 10 A 6
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test 2 1 0.5 0.2 0.1 0.05 0.5 15 V VGS = 10 V
Drain to Source Saturation Voltage VDS (on) (V)
4 5A 2 ID = 2 A
Static Drain to Source on State Resistance RDS (on) ()
0
4
8
12
16
20
1
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Apr 27, 2006 page 3 of 6
2SK2408
Static Drain to Source on State Resistance vs. Temperature
2.0 VGS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 VDS = 20 V Pulse Test 20 10 5 2 1 0.5 0.1 TC = -25C 25C 75C
1.6
1.2
ID = 10 A
0.8 2, 5 A 0.4
0 -40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
5,000 5,000 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000 1,000 500
1,000
Ciss
Coss 100
200 100 50 0.2
10 0.5 1 2 5 10 20 5 0 10 20
Crss
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
500 VDD = 100 V 250 V 400 V VGS 20 500
Switching Characteristics
VGS = 10 V VDD = 30 V PW = 2 s, duty < 1%
* *
VDS
Switching Time t (ns)
400
16
200 100 50
td(off)
300
12
tf tr
200 VDD = 400 V 250 V 100 V 8 16 24
8
20 10 5 0.2
100
ID = 7 A
4 0
td(on)
0
32
40
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Apr 27, 2006 page 4 of 6
2SK2408
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test 16
12 15 V 8 10 V 4 VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 VDD . = 30 V . td(on) Vin 10% 10%
Waveforms
90%
10% 90% td(off)
90% tr
tf
Rev.3.00 Apr 27, 2006 page 5 of 6
2SK2408
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK2408-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Apr 27, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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